Magnetic diode effect in double-barrier tunnel junctions

Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer

Controlling shot noise in double-barrier magnetic tunnel junctions.

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0...

Shot noise in magnetic double-barrier tunnel junctions

T. Szczepański, V. K. Dugaev, 2 J. Barnaś∗,3 J. P. Cascales, and F. G. Aliev Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland Department of Physics and CFIF, Instituto Superior Técnico, TU Lisbon, Av. Rovisco Pais, 1049-001 Lisbon, Portugal Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Pol...

First-principles theory of quantum well resonance in double barrier magnetic tunnel junctions.

Quantum well (QW) resonances in Fe(001)/MgO/Fe/MgO/Fe double barrier magnetic tunnel junctions are calculated from first principles. By including the Coulomb blockade energy due to the finite size islands of the middle Fe film, we confirm that the oscillatory differential resistance observed in a recent experiment [T. Nozaki, Phys. Rev. Lett. 96, 027208 (2006)10.1103/PhysRevLett.96.027208] orig...

Origin of large magnetocurrent in three-terminal double-barrier magnetic tunnel junctions